Near-infrared enhanced silicon PIN photodiode (DIP package)

Introduction:

This device has a spectral response range of 350~1100nm, with optimized response for near-infrared wavelengths, and features low dark current. It is suitable for photoelectric measurement instruments, optical analysis equipment, and optical power monitoring scenarios.

It can adapt to anti-interference, high-speed, and low-power consumption scenarios without the need for additional peripheral chips, and can also simplify circuit design and reduce the overall solution cost.

Features:

• With a silicon-based PIN structure as the core
• Equipped with a highly transparent photosensitive window
• Wide range of applicable operating voltages
• With photocurrent as the main output form

Dimension:

Spectral response

Dark current vs. reverse voltage

Junction capacitance vs. reverse voltage

Photosensitivity temperature characteristics