| 数量 | 价格(USD) | 发货日期 |
|---|---|---|
| 1-10 | 待定 | |
| 10- | 待定 |
注意：发货日期以上是因库存不足而调整的。
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Silicon PIN photodiode in the ultraviolet to near-infrared band
产品编号: PDCD100-F01
Highest sensitivity in low-light response; welding temperature of 260℃/5s, with strong compatibility for mass production; maximum reverse voltage of 20V, eliminating the need for additional voltage-reducing components in circuit design and simplifying peripheral circuits.
Suitable for devices with high requirements on photosensitive area, such as pulse oximeters in the medical field (relying on high sensitivity to near-infrared 1000nm) and wide-spectrum light intensity collection in large environmentaPackage Typel light monitoring stations (relying on large photosensitive area and extreme storage stability).
注意事项
- 产品图片仅供参考，并不代表所有产品。
已配置规格
| Package Type | DIP | Photosensitive Area Size (mm) | 10.0×10.0 |
| Operating Temperature (℃) | -20 to +80 | Dark Current (Max, pA) | 250 |
| Junction Capacitance (pF) | 1000 | Rise Time (μs) | 2.2 |
浏览全部型号
Silicon PIN photodiode in the ultraviolet to near-infrared band
PDCT01-F01
Spectral response: 190~1100nm, captures light across UV to near-infrared.
Silicon PIN photodiode in the ultraviolet to near-infrared band
PDCT06-F01
Pectral response 190~1100nm, peak wavelength 1000nm, excellent near-infrared responsivity.
Silicon PIN photodiode in the ultraviolet to near-infrared band
PDCT25-F01
190~1100nm wide spectral response, high conversion efficiency at near-IR.
Silicon PIN photodiode in the ultraviolet to near-infrared band
PDCD06-F01
No UV-NIR response gap, strong full-wavelength adaptability.
