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Near-infrared enhanced silicon PIN photodiode (DIP package)
采用双列直插（DIP）通孔封装的被动式光电转换功能器件。
- 精准捕捉弱信号
- 低暗电流 + 高线性度
- 强环境适配 + 低成本维护
输入您的电子邮件地址可免费访问、接收产品手册或享受特别折扣。
Overview
Specifcations
Applications
Introduction:
This device has a spectral response range of 350~1100nm, with optimized response for near-infrared wavelengths, and features low dark current. It is suitable for photoelectric measurement instruments, optical analysis equipment, and optical power monitoring scenarios.
It can adapt to anti-interference, high-speed, and low-power consumption scenarios without the need for additional peripheral chips, and can also simplify circuit design and reduce the overall solution cost.
Features:
- With a silicon-based PIN structure as the core
- Equipped with a highly transparent photosensitive window
- Wide range of applicable operating voltages
- With photocurrent as the main output form
Dimension:
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Near-infrared enhanced silicon PIN photodiode (DIP package)
PDCD34-501
The size of the photosensitive surface is 5.8×5.8 mm, and it has high near-infrared detection efficiency.
