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Near-infrared enhanced silicon PIN photodiode (DIP package)
A passive photoelectric conversion functional device with a dual in-line package (DIP) through-hole package.
- Accurately capture weak signals
- Low dark current + high linearity
- Strong environmental adaptability + low-cost maintenance
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Overview
Specifcations
Applications
Introduction:
This device has a spectral response range of 350~1100nm, with optimized response for near-infrared wavelengths, and features low dark current. It is suitable for photoelectric measurement instruments, optical analysis equipment, and optical power monitoring scenarios.
It can adapt to anti-interference, high-speed, and low-power consumption scenarios without the need for additional peripheral chips, and can also simplify circuit design and reduce the overall solution cost.
Features:
- With a silicon-based PIN structure as the core
- Equipped with a highly transparent photosensitive window
- Wide range of applicable operating voltages
- With photocurrent as the main output form
Dimension:
Explore Series
Near-Infrared Enhanced Silicon PIN Photodiode (DIP Package)
PDCD34-501
The size of the photosensitive surface is 5.8×5.8 mm, and it has high near-infrared detection efficiency.
