| 数量 | 价格(USD) | 发货日期 |
|---|---|---|
| 1-10 | 待定 | |
| 10- | 待定 |
注意：发货日期以上是因库存不足而调整的。
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Low Dark Current Silicon PIN Photodiode (TO packaging)
产品编号: PDCT34-101
The ultra-large photosensitive area can capture extremely weak, large-area scattered light (such as μW-level optical power). The TO8 packaging structure is sturdy, with strong resistance to impact and electromagnetic interference.
It is applied in night security light monitoring, Fourier transform infrared spectrometers, and overall light intensity detection in greenhouses.
注意事项
- 产品图片仅供参考，并不代表所有产品。
已配置规格
| Photosensitive Area Size (with Shape) | 5.8×5.8mm (Square) | Package Subtype (Including Window) | TO8, Optical Glass/Flat Window |
| Dark Current (Typ./Max., pA) | 5/30 | Junction Capacitance (Typ., pF) | 350 |
| Rise Time (Typ., μs) | 0.77 | Equivalent Noise Power (Typ., W/Hz¹/²) | 1.1×10⁻¹⁴ |
浏览全部型号
Low Dark Current Silicon PIN Photodiode (TO packaging)
PDCT01-201
1.1×1.1mm square photosensitive surface.
Low Dark Current Silicon PIN Photodiode (TO packaging)
PDCT01-202
1.1×1.1mm photosensitive surface.
Low Dark Current Silicon PIN Photodiode (TO packaging)
PDCT07-001
2.6×2.6mm square photosensitive surface.
Low Dark Current Silicon PIN Photodiode (TO packaging)
PDCT14-001
3.7×3.7mm square photosensitive surface.
