Photodetector


SiC-EUV-AG Photodetector

Solid-State Integrated EUV Detection Solution

  • Fundamental Advantages Empowered by Wide-Bandgap Materials
  • Precise Response Capability in the EUV Band
  • Functional Upgrade of AG (Enhanced Gain)
  • Stable Adaptability to Extreme Environments

SiC-EUV-AG Photodetector

  • SiC-5/125nm-2.5×2.5mm-AG8 Window for Semiconductor Manufacturing
  • 2.5×2.5mm SiC-AG8 component for biomedical spectrometers
  • High-temperature environment spectral analysis SiC-5/125nm-AG8 component

SiC-EUV-AG Photodetector

Covering EUV light source stability monitoring (uniform energy collection over a medium area) and serving as a module for scientific research spectrometers (compatible with standard aperture sizes);

Its visible - blind characteristic eliminates stray light interference, while the adjustable gain flexibly matches the laboratory - level dynamic signal range (from low to moderate light intensities).

SiC-EUV-AG Photodetector

Applicable to EUV lithography exposure dose monitoring (large-area uniform radiation measurement) and plasma diagnostics (capturing transient high-intensity radiation);


The high-flux radiation resistance characteristic of SiC ensures a long service life, and its 8-level adjustable gain covers the full-scenario range from "weak signal analysis" to "strong pulse quantification".

SiC-EUV-AG Photodetector

Compatible with EUV light source far-field distribution testing (wide-area coverage of low-illuminance signals) and large-area coating uniformity inspection (covering a larger area in a single scan); the vacuum flange supports high-vacuum chamber integration, and the adjustable gain enables seamless switching between "wide-area low light" and "local strong light", breaking through the dynamic range bottleneck of traditional detectors.

SiC-VUV-AG Photodetector

Professional-grade Detection Benchmark for the VUV Band

  • Material and Stability
  • Anti-interference and Signal Purity
  • Flexible Gain Adaptation
  • Environmental Compatibility
  • Performance and Services

SiC-VUV-AG Photodetector

Suitable for nanoscale defect detection in VUV lithography masks (capturing sub - micrometer - level defect signals) and single - molecule layer surface analysis (enabling high - resolution analysis of the interaction between VUV light and ultra - thin samples);

Leveraging the SiC - based low dark current characteristic, its 8 - level gain precisely amplifies extremely weak VUV signals. The vacuum flange is compatible with a high - vacuum environment (≤10⁻⁴ Pa), ensuring ultra - high - precision measurements free from interference by residual gases.

SiC-VUV-AG Photodetector

Covering scientific - grade VUV spectrometer modules (compatible with standard aperture sizes, balancing signal intensity and resolution) and VUV light source stability monitoring (medium - area uniform collection, ensuring data representativeness);

Its visible - blind characteristic eliminates ambient stray light interference, and the adjustable gain flexibly matches the laboratory - level dynamic signal range (from low to moderate light intensities), meeting multi - scenario testing requirements.

SiC-VUV-AG Photodetector

Suitable for VUV coating uniformity inspection (covering a typical area in a single scan to enable rapid evaluation of coating quality) and plasma transient radiation diagnostics (capturing millisecond-level VUV pulse signals);


The high-flux VUV radiation resistance characteristic of SiC ensures long service life, the 8-level gain covers the full-scenario range from "weak signal analysis" to "strong pulse quantification", and the vacuum flange supports high-vacuum chamber integration.

SiC-VUV-AG Photodetector

Compatible with large-area thin film deposition monitoring (wide-area coverage for efficient coating uniformity detection) and VUV plasma wide-area diagnostics (a single detector covers a larger spatial range, reducing the number of scans);


The SiC-based high stability and radiation resistance performance ensure long-term reliable operation, the adjustable gain enables seamless switching between "weak light signals" and "strong radiation pulses", and the vacuum flange is compatible with a high-vacuum environment (≤10⁻⁴Pa).

SiC-VUV-AG Photodetector

Suitable for VUV light source far-field distribution testing (wide-area coverage of low-illuminance signals to restore the spatial distribution characteristics of the light source) and large-area coating uniformity inspection (covering an ultra-large area in a single scan to improve inspection efficiency);


The vacuum flange supports high-vacuum chamber integration, and the adjustable gain breaks through the dynamic range bottleneck of traditional detectors, enabling flexible switching between "wide-area low light" and "local strong light" to meet the testing needs of complex scenarios.

SiC-AG Photodetector

Focus on industrial & research mid-UV accurate measurement needs

  • Material-Enabled High Stability
  • Pure Signal and Anti-Interference
  • Flexible Gain for Full-Scenario Adaptation
  • Multi-Scenario Compatible Design
  • Long-Term Reliability and Low Maintenance

GaN-AG Photodetector

Optoelectronic devices based on wide bandgap semiconductors

  • Full ultraviolet band coverage
  • Flexible and adjustable gain
  • High reliability and environmental adaptability
  • Complete customization and supporting facilities

GaN-AG Photodetector

It balances the photosensitive area and resolution, adapting to most ultraviolet detection scenarios; it has a wide gain range, supporting signal conversion from weak light (nW level) to strong light (μW level).



Applications: Laboratory ultraviolet spectroscopy analysis, UV curing equipment light intensity monitoring, miniaturized ultraviolet sensing modules.

GaN-AG Photodetector

It has extremely high spatial resolution and can detect ultraviolet light in tiny areas; its small size is suitable for high-density integrated devices.



Applications: UV lithography monitoring of semiconductor wafers, spot analysis of micro UV lasers, UV excitation light detection of biochips.

GaN-AG Photodetector

It has a large single detection area and is suitable for scattered ultraviolet light (such as greenhouse UVB radiation, large-area UV coating curing monitoring); the large size improves light collection efficiency.



Applications: UV radiation monitoring in agricultural greenhouses, large-area light intensity distribution testing of UV sterilization lamps, and light power detection of large UV curing ovens.

GaN-AG Photodetector

It has an outstanding response to long-wave ultraviolet rays and is suitable for UVA band detection; it is compatible with the visible light and near-ultraviolet regions in a wide band.



Applications: Cosmetics UVA/UVB protection testing, fluorescence excitation (405nm laser), long-wave ultraviolet germicidal lamp monitoring.

GaN-AG Photodetector

Short-wave ultraviolet has strong selectivity and is suitable for scenarios where long-wave interference needs to be excluded; small size improves spatial resolution.



Applications: Biomedical deep ultraviolet imaging, semiconductor deep ultraviolet lithography detection, 325nm laser power calibration.

GaN-AG Photodetector

Highly efficient deep ultraviolet response, suitable for high-energy short-wave ultraviolet detection; high sensitivity to capture weak deep ultraviolet signals.



Applications: Light intensity monitoring of medical UVC disinfection equipment, quality inspection of deep ultraviolet LEDs, evaluation of ultraviolet sterilization effect.

GaN-AG Photodetector

Covers a wide band of ultraviolet + visible light near-ultraviolet regions, suitable for multi-wavelength detection; strong compatibility, reducing equipment replacement costs.



Applications: multispectral ultraviolet analyzers, color fluorescence microscopes, performance testing of wide-band ultraviolet lamps (290~440nm).


Si/InGaAs-Ps-S Photodetector

Constructed based on indium arsenide antimonide (InAsSb) material

  • Ultra-high-speed response mechanism
  • High-sensitivity detection capability
  • Wide spectral adaptability

Si/InGaAs-Ps-S Photodetector

It is sensitive to the visible light band, has low noise, controllable cost, and strong integration (compatible with SMA interface and M4 support rod).



Applications: Visible light high-speed laser pulse waveform measurement, desktop-level quantum physics experiments.


Si/InGaAs-Ps-S Photodetector

Large photosensitive surface adapts to "wide light field" visible light detection, with low cost, meeting the needs of medium and low-speed scenarios.



Applications: Medium and low-speed visible light signal monitoring, teaching demonstration experiments.

Si/InGaAs-ps-S photodetector

Near-infrared "large light field" detection, suitable for weak signal or large-area light field scenarios.



Applications: Near-infrared weak signal measurement, large-area light field distribution monitoring.

Si/InGaAs-Ps-S Photodetector

Near-infrared "medium-speed" response, with a moderately sized photosensitive surface (balancing detection efficiency and accuracy).



Applications: Near-infrared medium-speed laser pulse detection, online monitoring of industrial production lines.

Si/InGaAs-ps-S photodetector

Near-infrared "high-speed" response, and small photosensitive surface enables "precise light field" detection.



Applications: Demodulation of near-infrared high-speed optical communication signals, precision measurement in scientific research.

Si/InGaAs-ps-S photodetector

Near-infrared "ultra-high speed + ultra-high bandwidth" with an extremely small photosensitive surface to accurately capture extremely short light pulses.


Applications: Near-infrared pulse demodulation in quantum communication, real-time signal capture in near-infrared lidar.

Si/InGaAs-ps-S photodetector

"Cross-band" coverage (visible light + near-infrared), with a large photosensitive surface suitable for multiple scenarios.



Applications: synchronous monitoring of multi-band optical signals, environmental spectral analysis.

Si/InGaAs-ps-S photodetector

"Long near-infrared" exclusive detection, with a large photosensitive surface adapted to long-wave scenarios.



Applications: Long-wave near-infrared gas detection (such as methane), infrared composition analysis of materials.

Si/InGaAs-ps-S photodetector

"Mid-infrared" band detection fills the gap in long-wave.



Applications: mid-infrared spectral analysis, deep space infrared signal detection.

Si-PDA-Adj-G Photodetector

Silicon-based amplifying photodetector

  • Wide spectral coverage and strong silicon-based compatibility
  • Enlarged design with outstanding low-light detection capability
  • Adjustable gain + bandwidth adaptation for wide scene compatibility
  • High compatibility + standardization for easy integration

Si-PDA-Adj-G PHOTODETECTOR

It has strong parameter balance, wide adaptability in terms of photosensitive range, response speed, and target surface size, without the need to compromise for a single scenario.



High bandwidth combined with fast response can accurately capture high-speed optical signals, reducing signal delay and distortion.

Si-PDA-Adj-G PHOTODETECTOR

It has high ultraviolet response sensitivity and can stably capture 190nm short-wave ultraviolet light signals. It is suitable for measuring small ultraviolet light spots after focusing with medium and small target surfaces, avoiding stray light interference introduced by large target surfaces.


It maintains the same gain adjustment logic as other models in the same series, ensuring consistent operating habits and reducing the cost of switching between multiple devices.

Si-PDA-Adj-G PHOTODETECTOR

The large target surface design can receive light signals over a larger area, avoiding the "cutting" of large light spots by small target surfaces, making it suitable for surface light source detection. With a response time of 35ns, it balances the needs of a large target surface and medium-to-high speed requirements.


It has no ultraviolet enhancement design, so its cost is lower than that of ultraviolet models. It is suitable for large light spot scenarios with pure visible light/near-infrared, offering higher cost performance.

Si-PDA-Adj-G PHOTODETECTOR

The only "ultraviolet enhancement + large target surface" combined model can not only capture 190nm ultraviolet light, but also receive large light spot signals, adapting to complex and multi-demand scenarios.


The large target surface reduces the missed capture of large light spot signals, and combined with ultraviolet enhancement, it can be used for global light intensity measurement of ultraviolet large-area light sources.


It can directly replace imported large target surface ultraviolet detectors, reducing the cost of equipment upgrading.


InGaAs-PDA-Adj-G Photodetector

Optoelectronic devices designed for the near-infrared band (800~1700nm)

  • Material and spectrum adaptation
  • Amplification type and adjustable gain
  • Wide dynamic range and high bandwidth
  • High compatibility and ease of use
  • Stable and reliable

InGaAs-AG Photodetector

Optoelectronic devices with indium gallium arsenide (InGaAs) as the core detection material

  • Wide coverage of spectral extension
  • Amplification type + adjustable gain
  • Low noise and high precision
  • High compatibility and easy integration
  • Stable adaptation to multiple environments

Si-PDA-Fix-G Photodetector

An amplifying optoelectronic device made of silicon as the detection material, specially designed for the ultraviolet to visible light band.

  • Wide range of materials and spectral coverage
  • Amplifying type + fixed gain design
  • Balanced performance in both sensitivity and speed
  • High compatibility and easy integration
  • Strong scene adaptability


InGaAs-PDA-Fix-G Photodetector

Ear-infrared dedicated detection equipment

  • Material and spectrum adaptation
  • Amplification type + fixed gain design
  • Performance balances sensitivity and speed
  • High compatibility and stability

InGaAs-PDA-Fix-G PHOTODETECTOR

It balances high bandwidth and medium gain, with a fast capture speed for weak light signals, and has strong adaptability in conventional high-speed near-infrared scenarios.



Application: Near-infrared rapid weak light measurement (such as LiDAR near-infrared pulse signal detection).

InGaAs-PDA-Fix-G PHOTODETECTOR

It has outstanding ultra-high-speed signal response capability, with a balanced combination of gain and bandwidth, and can efficiently convert high-speed near-infrared optical signals.



Application: Near-infrared ultra-high-speed optoelectronic development (such as near-infrared high-speed signal reception in optical communication)

InGaAs-PDA-Fix-G PHOTODETECTOR

It has strong detection capability for extremely weak light (fW level) and is suitable for low-light-intensity signal scenarios.



Applications: Measurement of near-infrared extremely weak light (such as near-infrared fluorescence lifetime testing, capture of weak signals in trace gas detection).

InGaAs-PDA-Fix-G PHOTODETECTOR

The large target surface design is suitable for large light spot near-infrared signals. The high gain can amplify weak large light spot optical signals, and it has strong stability.



Application: Near-infrared large light spot weak light detection (such as large light spot sample signal conversion in near-infrared spectroscopy analysis).

InGaAs-PDA-Fix-G PHOTODETECTOR

Its infrared extension characteristics cover the mid- and near-infrared bands, which can meet the needs of cross-band detection, with balanced parameters and wide adaptability.



Application: Mid- and near-infrared cross-band detection (such as testing the spectral characteristics of mid- and near-infrared materials).

InGaAs-DET-Bd-Conv Photodetector

Low-cost, high-stability general-purpose photoelectric conversion devices

  • Indium gallium arsenide wide spectrum
  • Low bias, low noise, fast response
  • Compatible with Thorlabs conventionally
  • Stable, reliable and customizable

InGaAs-DET-Bd-Conv PHOTODETECTOR

Its fast response capability enables it to timely capture rapidly changing optical signals, and the characteristic of visible light extension makes it applicable to various optical signal scenarios.



It performs excellently in visible light detection scenarios where high response speed is required.

InGaAs-DET-Bd-Conv PHOTODETECTOR

It has a relatively wide range of applications and can meet various conventional light detection needs. Its low-cost feature makes it competitive in large-scale applications or cost-sensitive projects.


Applications: It can be used for light signal detection with not extremely high precision requirements on industrial production lines, such as optical detection of appearance defects of ordinary products, or basic optical experiments in educational and scientific research institutions.

InGaAs-DET-Bd-Conv PHOTODETECTOR

A larger photosensitive size enables it to collect more light signals, resulting in better adaptability to scenarios with weak light signals or requiring large-area detection, and it can improve the sensitivity and reliability of detection.


Applications: Suitable for light signal detection in low-light environments, such as the detection of faint starlight in astronomical observations, or scenarios involving large-area light intensity distribution detection.

InGaAs-DET-Bd-Conv PHOTODETECTOR

It can detect light signals in a wider infrared band and has strong detection capability for infrared light signals.



It also performs well in terms of response speed and bandwidth, and can meet the requirements of some high-speed scenarios that have demands for infrared light detection.

InGaAs-DET-Bd-Conv PHOTODETECTOR

A wide infrared sensing range can cover the detection needs of more infrared light signals, and the moderate sensing size balances a certain level of light collection capability and response characteristics.


It is used in scenarios that have certain requirements for infrared light detection, such as infrared night vision detection in security monitoring, or infrared temperature monitoring in industrial production.

Si-DET-Bd-Hs PHOTODETECTOR

Silicon-based biased high-speed photoelectric conversion device

  • Broad spectrum response adaptation
  • High-speed response performance
  • Low-noise and stable output
  • Multiple coupling methods
  • High compatibility

Si-DET-Bd-HS PHOTODETECTOR

It has fast response and high bandwidth, and the window coupling is compatible with conventional optical systems.



It is suitable for general optical detection scenarios in visible light and near-infrared regions that require high response speed and bandwidth, such as signal acquisition in basic optical experiments.

Si-DET-Bd-Hs PHOTODETECTOR

Fast response, high bandwidth, and ball lens coupling enhance light collection capability.



It is used for visible light and near-infrared detection in low-light environments, such as signal detection in low-light imaging systems.

Si-DET-Bd-Hs PHOTODETECTOR

It features fast response and high bandwidth. Fiber coupling facilitates the integration of optical communication and other optical fiber systems.



It is suitable for visible light and near-infrared signal detection scenarios based on optical fibers, such as optical fiber communication and optical fiber sensing.

Si-DET-Bd-Hs PHOTODETECTOR

It has fast response and high bandwidth. The fiber coupling is compatible with fiber optic systems, and the performance is stable.



It can be used for signal detection in fields such as fiber optic communication and fiber optic sensing that have high requirements for stability.

Si-DET-Bd-Hs PHOTODETECTOR

Fiber optic coupling is suitable for fiber optic systems and has advantages in scenarios where costs are a concern or where requirements for response speed and bandwidth are relatively low.


It is applicable to detection scenarios of visible light and near-infrared fiber optic systems that require fiber coupling, with relatively loose requirements for response speed and bandwidth, such as entry-level fiber optic sensing experiments.

Si-APD-AG AV Photodetector

Silicon-based amplifying adjustable gain photodetection equipment

  • High-sensitivity weak light detection
  • Wide gain adjustment range
  • Multi-scenario adaptability
  • High ease of use

InGaAs-APDI-AG AV Photodetector

High-sensitivity photoelectric detection equipment for near-infrared light detection

  • High-sensitivity weak light detection
  • Wide gain adjustment range
  • Multiple models to adapt to different needs
  • Stable and reliable performance

InGaAs-APDI-AG AV PHOTODETECTOR

It has the largest photosensitive size among commercial indium gallium arsenide APDs, enabling it to collect more optical signals.



It is suitable for large-area low-light imaging, such as optical detection of large-area material defects in industrial production.

InGaAs-APDI-AG AV PHOTODETECTOR

The photosensitive size is moderate, balancing light collection capability and a certain level of spatial resolution.



It can be used for conventional near-infrared spectroscopy analysis to perform component detection on samples.

InGaAs-APDI-AG AV PHOTODETECTOR

While ensuring a certain level of light collection capability, the spatial resolution is further improved.



It is suitable for short-distance and medium-precision ranging of targets in small lidar systems.

InGaAs-APDI-AG AV PHOTODETECTOR

It has high spatial resolution and can detect optical signals in small areas more accurately.



It can be used for the detection of cell-level near-infrared fluorescent signals in biomedicine.

InGaAs-APDI-AG AV PHOTODETECTOR

It has high spatial resolution and can accurately detect light signals in tiny areas.



It is suitable for optical inspection of tiny defects in chips during semiconductor chip manufacturing.

InGaAs-APDI-AG AV PHOTODETECTOR

It has extremely high spatial resolution and fast response speed, making it suitable for detecting high-speed weak light signals.



It can be used in high-speed optical communication systems for receiving and detecting weak high-speed optical signals.

Si-APD-Fix-G AV Photodetector

Silicon material photoelectric detection equipment

  • High sensitivity and fixed gain
  • Good compatibility
  • Excellent performance and high cost-effectiveness

Si-APD-Fix-G AV PHOTODETECTOR

A moderate photosensitive size can collect a certain range of optical signals, and its bandwidth performance can meet most conventional photoelectric signal detection. The fixed gain ensures the stability of signal conversion.


It is suitable for conventional visible light and near-infrared light measurement scenarios, such as ambient light monitoring and optical signal detection in ordinary optical experiments.

Si-APD-Fix-G AV PHOTODETECTOR

It has a high gain under High-Z load, can effectively amplify weak photocurrents, and has high detection sensitivity for optical signals in the 400~1000nm band.



It is suitable for scenarios that require high gain for optical signals in the 400~1000nm band, such as specific spectral analysis experiments and optical signal reception in indoor optical communication.

Si-APD-Fix-G AV PHOTODETECTOR

It has a high transimpedance gain, can significantly amplify weak optical signals, and performs excellently in weak light detection.



It is suitable for scenarios where optical signals are extremely weak, such as the detection of weak optical signals from fluorescent markers in biomedicine and the detection of weak starlight in astronomical observations.

Si-APD-Fix-G AV PHOTODETECTOR

A larger photosensitive size combined with high transimpedance gain can not only collect more optical signals but also effectively amplify them, resulting in extremely high detection sensitivity under specific loads.



It is suitable for scenarios with extremely high requirements for detecting weak optical signals in the 400~1000nm wavelength range, such as the reception of weak optical signals at the end of long-distance optical fiber communications.

Si-APD-Fix-G AV PHOTODETECTOR

It has an extremely wide bandwidth, can quickly respond to changes in high-frequency optical signals, and is suitable for detecting rapidly changing optical signals such as high-speed optical pulses.



It is applicable to high-speed optical signal detection in optical communication, such as optical signal reception in 5G optical communication systems and high-speed laser pulse measurement.

Si-APD-Fix-G AV PHOTODETECTOR

It has both a relatively wide bandwidth and a moderate photosensitive size, enabling it to detect high-speed optical signals while ensuring a certain level of light collection capability.



It is suitable for scenarios that require the detection of high-speed optical signals and have certain requirements for the collection range of optical signals, such as optical signal detection in short-distance high-speed optical communication.

Si-APD-Fix-G AV PHOTODETECTOR

It has an extremely high transimpedance gain, which can amplify weak optical signals to a great extent, and has an extremely strong detection capability for extremely weak optical signals.



It is suitable for scenarios where optical signals are extremely weak and the bandwidth requirement is not high, such as single-photon detection experiments and ultra-long-distance extremely weak laser signal detection.

Si-APD-Fix-G AV PHOTODETECTOR

It has an ultra-high transimpedance gain, which further enhances the ability to amplify weak optical signals, and the photosensitive size can also ensure a certain amount of light collection.



It is suitable for scenarios that require ultra-high gain for extremely weak optical signals in the 400~1000nm wavelength band, such as single-photon level optical signal detection in quantum optics experiments.


InGaAs-APD-Fix-G AV Photodetector

Professional avalanche photodetectors for near-infrared light detection

  • High-sensitivity detection
  • Fixed gain stability
  • Specific wavelength band response
  • Integrated amplification function

InGaAs-APD-Fix-G AV PHOTODETECTOR

The gain is moderate, which can to a certain extent balance the ability to amplify optical signals and the response ability to rapidly changing optical signals, and the signal amplification is stable.


It is suitable for ordinary near-infrared optical signal detection scenarios, such as general optical experiments and optical signal detection in short-distance optical fiber communication.

InGaAs-APD-Fix-G AV PHOTODETECTOR

It has an extremely high fixed gain and an extremely strong ability to amplify weak optical signals, being able to detect extremely weak near-infrared optical signals.



It is suitable for environments where optical signals are very weak, such as the signal receiving end in long-distance optical fiber communication, or biomedical experiments that detect weak fluorescent signals.

InGaAs-APD-Fix-G AV PHOTODETECTOR

It has a wide bandwidth and can quickly respond to optical signals with high-frequency changes, effectively capturing high-speed optical signals such as fast optical pulses.



It is suitable for scenarios that require the detection of high-speed optical signals, such as high-speed optical communication systems and the detection of fast reflected optical signals in lidar.

InGaAs-APD-Fix-G AV PHOTODETECTOR

It has an extremely wide width, enabling it to adapt to the detection of extremely high-frequency optical signals. Meanwhile, its larger photosensitive size allows it to collect more optical signals.



It is suitable for scenarios with high requirements for high-speed optical signal detection within the 1260 - 1650nm wavelength band, such as high-speed optical fiber communication in specific wavelength bands, high-precision laser ranging, etc.

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